Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.1A, RDS(ON) = 68mW @VGS = 10V. RDS(ON) = 86mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

N Channel MOSFET

Dual N-ChannelEnhancement Mode Power MOSFET

GENERAL FEATURES * Vos=B0VIo=6A + Rosin

N-Channel Enhancement Mode Field Effect Transistor

Description The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features • VDS(V)=30V • ID=43A (VGS=10V) • RDS(ON)

30V N-Channel MOSFET

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18 (19/30) AWG Tinned Copper

文件：410.64 Kbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：940.27 Kbytes Page：8 Pages

30V N-Channel MOSFET

文件：306.89 Kbytes Page：6 Pages