Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -5.1A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 68mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

P Channel MOSFET

Security & Sound, #20-9c, BC, Shielded, CMP

Product Description Security & Sound Cable, Plenum-CMP, 9-20 AWG stranded bare copper conductors with Flamarrest® insulation, Beldfoil® shield and Flamarrest® jacket with ripcord

P-Channel Enhancement Mode Field Effect Transistor

[Alpha & Omega Semiconductor, Ltd.] General Description The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) =

P-Channel Enhancement Mode Power MOSFET

Features Vps= -30V, Ip= -100A Rns(on)

CUSTOMER PRODUCT SPECIFICATION

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30V P-Channel MOSFET

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