P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-5.7A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=68mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

ACFilmCapacitorsLighting

Features ■Self-healingproperties ■Lowdissipationfactor ■Highinsulationresisitance Construction ■Dielectric:polypropylenefilm ■Aluminiumcan ■Softpolyurethanresin ■Internaldischageresistor ■Overpressuredisconnector Typicalapplications Forgeneralsinewaveapplicat

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6405usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6405isPb-free(meetsROHS&Sony259specifications).AO6405LisaGreenProductorde

InsulationPiercingClips

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30VP-ChannelMOSFET

文件：506.6 Kbytes Page：5 Pages