P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -5.7A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 68mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

P Channel MOSFET

Security & Sound, #20-7c, BC, Shielded, CMP

Product Description Security & Sound Cable, Plenum-CMP, 7-20 AWG stranded bare copper conductors with Flamarrest® insulation, Beldfoil® shield and Flamarrest® jacket with ripcord

AC Film Capacitors Lighting

Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6405 is Pb-free (meets ROHS & Sony 259 specifications). AO6405L is a Green Product orde

Insulation Piercing Clips

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24 (7/32) AWG Tinned Copper

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