Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. ■ -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

IEC Appliance Inlet C14/C18, Screw-on mounting, Front side,Quick-connect

Description - Panel mount : Screw-on mounting , Front Side - Appliance Inlet , Pin temperature 70 °C , protection class I or II - Available in black and white

UV Power METERS

A Wide Lineup of 248 nm, 365 nm and 436 nm Type The C6080 series is a compact UV power meter specifically designed to measure the intensity of UV radiation emitted from the light guide output end of a UV spot light source. The C6080 uses a UV sensor that exhibits stable sensitivity even after

Heavy Duty Ring and Spade Terminals

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N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET

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