Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ Surface mount Package

P Channel MOSFET

Dual P-Channel Enhancement Mode Field Effect Transistor

文件：337.66 Kbytes Page：4 Pages

Dual P-Channel -30V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

Dual P-Channel 20-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4953 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application

Dual P-Channel 30-V (D-S) MOSFET

文件：1.0646 Mbytes Page：9 Pages

P-Channel Enhancement Mode Power MOSFET

文件：536.32 Kbytes Page：5 Pages