Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.1A, RDS(ON) = 120mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.1A, RDS(ON) = 120mW @VGS = -10V. RDS(ON) = 150mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

P-Channel MOSFET uses advanced trench technology

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30V Dual N-Channel MOSFET

General Description The AO4948 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the s

Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

Dual N-Channel MOSFET

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Standard CMOS Voltage Detector IC

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