P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -7.5A, RDS(ON) = 28mW @VGS = -10V. RDS(ON) = 38mW @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -7.5A, RDS(ON) = 28mW @VGS = -10V. RDS(ON) = 38mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

P-Channel MOSFET uses advanced trench technology

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P Channel MOSFET

ROTARY MOTION | PRECISION SENSOR

Features • Servo Mount / Ball Bearing • 7/8” to 2” Diameter Servo Mount • Hybrid 3, 5 and 10-Turn Precision Potentiometers

Security & Sound, 3 Conductor 16 AWG BC, LSZH, Shielded, Eca

Product Description Security & Commercial Audio Cable, 3-16 AWG stranded bare copper conductors with polypropylene insulation, Beldfoil® shield, LSZH jacket with ripcord, CPR Eca

HEYClip™ Nylon Arrow Clips

文件：100.93 Kbytes Page：1 Pages

HEYClip™ Nylon Arrow Clips

文件：100.93 Kbytes Page：1 Pages

4200A-SCS Parameter Analyzer

文件：3.4507 Mbytes Page：45 Pages