N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7.5A, RDS(ON) = 28mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 8A, RDS(ON) = 29mW @VGS = 10V. RDS(ON) = 36mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. RDS(ON) = 55mW @VGS = 2.5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 8A, RDS(ON) = 29mΩ @VGS = 10V. RDS(ON) = 36mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount

N-Channel Enhancement Mode Field Effect Transistor

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N Channel MOSFET

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 20 (7/28) AWG Tinned Copper 0.038 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.058+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLE 1061 80C 300V VW-1 20 AWG --- LLXXXX CSA AWM I A/B 80C 300 VOLTS FT1 CE ROHS {0} * = Factory

4700

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Customer Specification

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