Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. ■ -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V, 10A, RDS(ON) = 14mW @VGS = 10V. RDS(ON) = 20mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. -30V, -8A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 30mW @VGS

N+P Power MOSFET

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

113 MHz Bandpass Filter

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RS485, 4 Pr #22 Str TC, PO Ins, OSTC Brd, PVC Jkt, CM

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