P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -13A, RDS(ON) = 10mW @VGS = -10V. RDS(ON) = 15.5mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

P Channel MOSFET

General Purpose High Current NPN Transistor Array

General Purpose High Current NPN Transistor Array The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low current (i.e., 1mA) for applications in which offset paramet

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