N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 14A, RDS(ON) = 7.8mW @VGS = 10V. RDS(ON) = 11.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

N-Channel MOSFET uses advanced trench technology

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N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

文件：423.68 Kbytes Page：4 Pages

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

High-performance Optical Mouse Sensor

Description The ADNS-3060 is a high performance addition to Agilent’s popular ADNS family of optical mouse sensors. The ADNS-3060 is based on a new, faster architecture with improved navigation. The sensor is capable of sensing high speed mouse motion - up to 40 inches per second and acceler

Pry Out Plugs

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N-Channel Trench Power MOSFET

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Optical Mouse Sensor

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