Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■ 20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ -20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

102/103, 202/203, 302/303 Flanged Diaphragm Seal

FEATURES 316L stainless steel top housing (standard) A thin PTFE gasket between the diaphragm/bottom housing ensures a leak-tight, corrosion resistant seal Continuous duty design prevents loss of process fluid if pressure instrument is removed or fails Modular design allows for a suitable

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BLACK COLOR NI/CU POLYESTER TAFFETA FABRIC-OVER-FOAM

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M12-A Female 5 Pin Field Attachable

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