Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 3.4A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 3.4A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N-Channel MOSFET uses advanced trench technology

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N Channel MOSFET

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 3.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 165mW @VGS = 3V. RDS(ON) = 130mW @VGS = 5V.

N Channel Product

N Channel MOSFET

COMMON MODE CHOKES

COMMON MODE CHOKES ● Common mode choke for power application ● High Impedance to minimize common mode noise ● Excellent EMI performance ● Industrial temperature range: -40ºC to +130ºC

SMD Power Inductor

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SMD Power Inductor

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INDUCTORS

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FIXED INDUCTORS

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