N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 2A, RDS(ON) = 440mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 1.8A, RDS(ON) = 460mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 515mW @VGS = 5V. RDS(ON) = 530mW @VGS = 3V.

N Channel MOSFET

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

PLL Module

Description The plerowTM PLL synthesizer module was designed for use in wireless and wireline systems in a wide range of frequency from 50 MHz to 6 GHz. ASBís PLL provides exceptionally low spurious and phase noise performance with fast locking time and low current consumption. All products are

Mechanical Cam Switches

BNS 819-B08-R08-46-13 Basic features Approval/Conformity CE UKCA CCC WEEE Basic standard IEC 60947-5-1 Operating principle 1-8. Switch position: Mechanical Version Snap contact

Cu Alloy Bare Ferrule, Smooth Funnel Entry, 2 AWG, 0.59 L, Seamless bbl, Tin Plated, For Use On Cu Cond.

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