N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,2A,RDS(ON)=440mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,1.8A,RDS(ON)=460mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=515mW@VGS=5V. RDS(ON)=530mW@VGS=3V.

PLLModule

Description TheplerowTMPLLsynthesizermodulewasdesignedforuseinwirelessandwirelinesystemsinawiderangeoffrequencyfrom50MHzto6GHz.ASBísPLLprovidesexceptionallylowspuriousandphasenoiseperformancewithfastlockingtimeandlowcurrentconsumption.Allproductsare

MechanicalCamSwitches

BNS819-B08-R08-46-13 Basicfeatures Approval/ConformityCE UKCA CCC WEEE BasicstandardIEC60947-5-1 Operatingprinciple1-8.Switchposition:Mechanical VersionSnapcontact

CuAlloyBareFerrule,SmoothFunnelEntry,2AWG,0.59L,Seamlessbbl,TinPlated,ForUseOnCuCond.

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