N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.3A, RDS(ON) = 6 Ω @VGS = 10V. RDS(ON) = 6 Ω @VGS = 5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92 package.

N Channel MOSFET

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

C-band Crossbar/Fan-Out

文件：534.52 Kbytes Page：2 Pages

Male Pins

文件：132.89 Kbytes Page：1 Pages

toggle switches

文件：79.37 Kbytes Page：1 Pages