N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 0.4A, RDS(ON) = 2Ω @VGS = 10V. RDS(ON) = 3Ω @VGS = 10V. ■ High dense cell design for low RDS(ON). ■ Rugged and reliable. ■ TO-92 package.

N-Channel Enhancement Mode Field Effect Transistor

Miniature Toggle Switches

Features/Benefits • Multi-pole and multi-position • Wide variety of actuator and termination options • Epoxy terminal-seal compatible with bottom wash cleaning • RoHS compliant Typical Applications • Telecommunications • Instrumentation • Medical equipment

Available in on-delay, true off-delay, and on/off-delay

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INNOVATIVE SOLUTION FOR LARGER TANK SIZE AND HIGH FLOW RATE

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7000 SERIES/HIGH RELIABILITY REED RELAYS

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DIP Switches

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