N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V, 0.4A, RDS(ON) = 6.75 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. RoHS compliant.

N Channel MOSFET

Single-Ended Cordsets

Basic features Approval/Conformity CE EAC WEEE

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.