Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. ■ -20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capa

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 4A, RDS(ON) = 45mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. -20V, -2.8A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

2609B Broadband Photodiode Module

Description The 2609B is a packaged impedance-matched photodiode module with internal gain designed for use in optical broadband receivers in fiber-optic networks. The patented impedance-match technology results in improved gain-bandwidth product compared to external circuits due to better contro

Broadband Photodiode Module

The 2609B is a packaged impedance-matched photodiode module with internal gain designed for use in optical broadband receivers in fiberoptic networks. The patented impedance-match technology results in improved gain-bandwidth product compared to external circuits due to better control of parasitic

2609C Broadband Photodiode Module

Description The 2609C is a packaged impedance-matched photodiode module with internal gain designed for use in optical broadband receivers in fiber-optic networks. The patented impedance-match technology results in improved gain-bandwidth product compared to external circuits due to control of pa

Simple Drive Requirement, Small Package Outline

文件：64.849 Kbytes Page：4 Pages

Simple Drive Requirement, Small Size & Lower Profile

文件：63.86 Kbytes Page：4 Pages