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位置：首页 > IC中文资料第11836页 > CEH

型号 功能描述 生产厂家&企业 LOGO 操作
CEH2288

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,5.2A,RDS(ON)=26mΩ@VGS=4.5V. RDS(ON)=35mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2288

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,5.2A,RDS(ON)=23mW@VGS=4.5V. RDS(ON)=30mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2305

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. RDS(ON)=119mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2305A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=60mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=85mW@VGS=-2.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2310

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,6.2A,RDS(ON)=33mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2310L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,6.1A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=45mW@VGS=2.5V. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2311

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-3.5A,RDS(ON)=85mΩ@VGS=-4.5V. RDS(ON)=130mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2313

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-4.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2313-HF

MOSFET

Features -Simpledriverequirement. -Lowon-resistance. -Smallpackageoutline.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP
CEH2315

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-5A,RDS(ON)=50mW@VGS=-10V. RDS(ON)=85mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2316

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,6A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2316A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,6.3A,RDS(ON)=32mW@VGS=10V. RDS(ON)=44mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2321

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=62mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■TSOP-6package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2321

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=62mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2321A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=75mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■TSOP-6package. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2321A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=75mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2331

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2331

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2331A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-5.5A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2351

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V,-1.45A,RDS(ON)=720mW@VGS=-10V. RDS(ON)=750mW@VGS=-6V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2352

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 110V,2.3A,RDS(ON)=360mW@VGS=10V. RDS(ON)=420mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2354

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,2.2A,RDS(ON)=370mW@VGS=10V. RDS(ON)=420mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2362

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,4.3A,RDS(ON)=60mW@VGS=10V. RDS(ON)=74mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2608A

Dual Enhancement Mode Field Effect Transistor (N Channel)

20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. RDS(ON)=110mW@VGS=1.8V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2609

Dual Enhancement Mode Field Effect Transistor

FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2609A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2637

Dual Enhancement Mode Field Effect Transistor (P Channel)

FEATURES -20V,-3.0A,RDS(ON)=70mW@VGS=-4.5V. RDS(ON)=90mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. Lead-freeplating;RoHScompliant. RDS(ON)=120mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2637A

Dual Enhancement Mode Field Effect Transistor (P Channel)

FEATURES -20V,-3.3A,RDS(ON)=65mW@VGS=-4.5V. RDS(ON)=100mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=150mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH3456

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,5.5A,RDS(ON)=42mΩ@VGS=10V. RDS(ON)=59mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH8205

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,5.2A,RDS(ON)TYP=25mW@VGS=4.5V. RDS(ON)TYP=30mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. Leadfreeproductisacquired. Halogenfree.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEH2305

P-Channel Enhancement Mode Field Effect Transistor

文件：308.1 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2313_10

P-Channel Enhancement Mode Field Effect Transistor

文件：345.81 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEH2321_10

P-Channel Enhancement Mode Field Effect Transistor

文件：430.39 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

CEH产品属性

  • 类型

    描述

  • 型号

    CEH

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    P-Channel Enhancement Mode Field Effect Transistor

CEH供应商更多...

更新时间：2025-8-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
CEH2288
CET/華瑞
24+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
中天科工半导体（深圳）有限公司
CEH2288
CET/華瑞
25+
SOT23-6
33878
CET/華瑞全新特价CEH2288即刻询购立享优惠#长期有货
询价
深圳市科芯源微电子有限公司
CEH2288
台产
25+
SOT23-6
54648
百分百原装现货 实单必成
询价
深圳市科恒伟业电子有限公司
CEH2288
台产
1942+
SOT23-6
9852
只做原装正品现货或订货!假一赔十!
询价
深圳诚思涵科技有限公司
CEH2288
CET
19+
TSOP-6
200000
询价
深圳兆威电子有限公司
CEH2288
CET
23+
TSOP-6
63000
原装正品现货
询价
深圳市振宏微科技有限公司
CEH2288
SOT-163
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市拓亿芯电子有限公司
CEH2288
CET
23+
SOT23-6
15000
全新原装现货,价格优势
询价
深圳市中联芯电子有限公司
CEH2288
CET/華瑞
24+
TSOP-6
7800
全新原厂原装正品现货,低价出售,实单可谈
询价
深圳市宏世佳电子科技有限公司
CEH2288
CET
2025+
TSOP-6
7695
全新原厂原装产品、公司现货销售
询价

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    深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729

    2019-11-25

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