N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 40A, RDS(ON) = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 118A, RDS(ON) = 4.0mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

N-Channel Enhancement Mode Field Effect Transistor

N Channel MOSFET

TREK 603

TYPICAL APPLICATIONS  Driving piezoelectric actuators  Modulating electrooptics  Electrostatically controlling ion beams  Providing remote ON/OFF capabilities for automated or computer controlled systems

JUNCTION BOXES - SELECTIVE ENTRY

Brief Description of Products Junction box with cable entries in the side wall that are selectable by alignment of symbols and text on the cover. Features Captive cover fixing screw Slotted terminals allowing for unbroken ring wiring 4 Selective entries in side wall with knockouts allowing

2A and 5A/50Vdc and 5A/250 Vdc DC Solid-State Relays

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횠5.0mm mounting Robust bright nickel plated brass housing

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Filter Adapter 603

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