N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N Channel MOSFET

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

Fast Switching

FEATURES • Drain Current ID= 40A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) • Fast Switching APPLICATIONS • Switching power supplies,converters, AC and DC motor controls

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

N-Channel 100-V (D-S) MOSFET

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