N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 51A , RDS(ON) = 10mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 17mW @VGS = 4.5V. RoHS compliant.

N Channel MOSFET

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Highlights • maxCache 4.0 caching software • RAID levels: 0, 1, 5, 6, 10, 50, 60, 1 ADM and 10 ADM • Supports simultaneous use of RAID and raw devices (mixed mode) • Fifth-generation Zero-Maintenance Cache Protection (ZMCP) • Up to 24 native SAS/SATA ports in a LP/MD2 design • 12 Gbps and 6

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