N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 6A, RDS(ON) = 1.45W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 5.9A, RDS(ON) = 0.65W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 6.2A, RDS(ON) = 0.65W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

N Channel MOSFET

N Channel MOSFET

N Channel MOSFET

MOSFET 650V, 7A N-CHANNEL

FEATURE • RoHS Compliant • RDS(ON),typ.=1.2 Ω@VGS=10V • Low Gate Charge Minimize Switching Loss • Fast Recovery Body Diode DESCRIPTION The AM07N65 is available in TO220F Package. APPLICATION • Adaptor • Charger • SMPS Standby Power

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel 6 50V (D-S) Power MOSFET

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