Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 7A, RDS(ON) = 20mW @VGS = 4.5V. RDS(ON) = 28mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. RDS(ON) = 48mW @VGS = 1.8V.

N Channel MOSFET

Analog Video, #27 Str BCCS, 95% TC Braid, PVC Jacket

Product Description 27 AWG stranded (7x35) .017 bare copper-covered steel conductor, polyethylene insulation, tinned copper braid shield (95% coverage), PVC jacket.

Zero Drift, Bidirectional Current Shunt Monitor

GENERAL DESCRIPTION The AD8218 is a high voltage, high resolution current shunt amplifier. It features a set gain of 20 V/V, with a maximum ±0.35 gain error over the entire temperature range. The buffered output voltage directly interfaces with any typical converter. The AD8218 offers excellent i

DC axial fans

文件：197.7 Kbytes Page：1 Pages

DC axial compact fan

文件：465.63 Kbytes Page：4 Pages

Zero Drift, Bidirectional Current Shunt Monitor

文件：361.53 Kbytes Page：16 Pages