N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■60V,80A,RDS(ON)=9.0mΩ@VGS=10V. RDS(ON)=12.0mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■60V,80A,RDS(ON)=9.0mΩ@VGS=10V. RDS(ON)=12.0mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

AlternateActionandMomentaryPushbuttonSwitches

Features/Benefits •Longtravel •AvailablewithLED •Longlifecontactdesign •Epoxyterminalseal compatabilewithbottomwashcleaning •RoHScompliantmodels available TypicalApplications •Instrumentation •Computersandperipherals •Telecommunicationsand networkingequipme

ChipTransformer

1、Features Operatingtemperature-40℃~130℃ Suitableforlead-freereflowsoldering CompliancewithRoHSandHalogenFree Bifilarwinding AEC-Q200qualified 2、Application UsedradiationnoisesuppressionforautomotiveCAN-BUS/FlexRaysystems UsedforIndustrialfieldbus

AlternateActionandMomentaryPushbuttonSwitches

文件：1.24737 Mbytes Page：10 Pages

AlternateActionandMomentaryPushbuttonSwitches

文件：726.93 Kbytes Page：10 Pages

True-rmsMultimeter

文件：5.63044 Mbytes Page：140 Pages