N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 80A, RDS(ON) = 10.0mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 80A, RDS(ON) = 9.0mΩ @VGS = 10V. RDS(ON) = 12.0mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 80A, RDS(ON) = 9.0mΩ @VGS = 10V. RDS(ON) = 12.0mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 80.0A, RDS(ON) = 10.0mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

Alternate Action and Momentary Pushbutton Switches

Features/Benefits • Long travel • Available with LED • Long life contact design • Epoxy terminal seal compatabile with bottom wash cleaning • RoHS compliant models available Typical Applications • Instrumentation • Computers and peripherals • Telecommunications and networking equipme

Chip Transformer

1、Features  Operating temperature -40℃~130℃  Suitable for lead-free reflow soldering  Compliance with RoHS and Halogen Free  Bifilar winding  AEC-Q200 qualified 2、Application  Used radiation noise suppression for automotive CAN-BUS / Flex Ray systems  Used for Industrial field bus

Alternate Action and Momentary Pushbutton Switches

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Alternate Action and Momentary Pushbutton Switches

文件：726.93 Kbytes Page：10 Pages

True-rms Multimeter

文件：5.63044 Mbytes Page：140 Pages