N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 52A, RDS(ON) = 11mΩ (typ) @VGS = 10V. RDS(ON) = 16mΩ (typ) @VGS = 5V. ■ Extra low gate charge. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 52A, RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20mΩ @VGS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 52A, RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20mΩ @VGS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES • 30V, 60A, RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. • Super high dense cell design for extremely low RDS(ON). • High power and curent handing capability. • TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 60A, RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 18.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 144A, RDS(ON) = 4.0mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

TREK 603

TYPICAL APPLICATIONS  Driving piezoelectric actuators  Modulating electrooptics  Electrostatically controlling ion beams  Providing remote ON/OFF capabilities for automated or computer controlled systems

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Brief Description of Products Junction box with cable entries in the side wall that are selectable by alignment of symbols and text on the cover. Features Captive cover fixing screw Slotted terminals allowing for unbroken ring wiring 4 Selective entries in side wall with knockouts allowing

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