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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEB603 | N-ChannelLogicLevelEnhancementModeFieldEffectTransistor
| CETChino-Excel Technology 华瑞华瑞股份有限公司 |  |   |
CEB603 | N-ChannelLogicLevelEnhancementModeFieldEffectTransistor
| CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■30V,52A,RDS(ON)=11mΩ(typ)@VGS=10V. RDS(ON)=16mΩ(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES •30V,60A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. •SuperhighdensecelldesignforextremelylowRDS(ON). •Highpowerandcurenthandingcapability. •TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■30V,60A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=18.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,135A,RDS(ON)=4.6mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,144A,RDS(ON)=4.0mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor
| CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor
| CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
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CEB603产品属性
- 类型
描述
- 型号
CEB603
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
22+ |
TO-263 |
17639 |
原装正品现货,可开13点税 |
|||
CET |
01+ |
120 |
公司优势库存 热卖中! |
||||
CET/華瑞 |
2405+ |
TO-263 |
4475 |
只做原装正品渠道订货 |
|||
CET/華瑞 |
24+ |
TO-263 |
21574 |
郑重承诺只做原装进口现货 |
|||
CET |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
|||
SOT263 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
CET |
24+ |
SOT-263 |
65200 |
一级代理/放心采购 |
|||
CET/華瑞 |
25+ |
TO-263 |
54648 |
百分百原装现货 实单必成 |
|||
24+ |
SMD |
3200 |
绝对原装自家现货!真实库存!欢迎来电! |
||||
CET |
24+ |
TO-263 |
15800 |
绝对原装现货,价格低,欢迎询购! |
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CEB603规格书下载地址
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2019-11-25
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