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位置：首页 > IC中文资料第10176页 > CEB

CEB价格

参考价格：￥0.0000

型号：CEB 品牌：Genteq / GE 备注：这里有CEB多少钱，2025年最近7天走势，今日出价，今日竞价，CEB批发/采购报价，CEB行情走势销售排行榜，CEB报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CEB01N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB01N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB02N6

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ​​​​​​​■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB02N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB02N65D

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB02N65G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB02N6A

N-Channel Enhancement Mode Field Effect Transistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB02N6A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB02N7

N-Channel Enhancement Mode Field Effect Transistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB02N7G

N-Channel Enhancement Mode Field Effect Transistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB02N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB02N9

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB03N100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB03N8

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB04N100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB04N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB04N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB04N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB04N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB04N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB05N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB05N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB05P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-18A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB06N5

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ●500V,6.6A,RDS(ON)=1Ω@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB06N7

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB07N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB07N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB07N65LN

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB07N65SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB07N7

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB07N7

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB07N8

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB08N6A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB08N8

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB09N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB09N7A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB09N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB09N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB100N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB1012

N-Channel Enhancement Mode Field Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB1012L

N-Channel Enhancement Mode Field Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB10N4

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ​​​​​​​■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB10N4

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB10N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB10N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB10P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-9A,RDS(ON)=350mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB110P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-105.5A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=8.5mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB1175

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB1185

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB1186

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB1188

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB1188SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB1194

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB1195

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEB1195

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB11N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB125N15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEB12N5

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS

CEB产品属性

  • 类型

    描述

  • 型号

    CEB

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

CEB供应商更多...

更新时间：2025-8-3 12:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳兆威电子有限公司
CEB02N6
CET
22+
TO-263
17636
原装正品现货,可开13点税
询价
深圳市盈慧通电子有限公司
CEB02N65A
CET/華瑞
2511
TO-263
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
贸泽芯城（深圳）电子科技有限公司
CEB01N6G
CET/華瑞
23+
TO-263
122999
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市一线半导体有限公司
CEB02N6
CET
24+
50000
询价
深圳市创新迹电子有限公司
CEB01N6G
CET/華瑞
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
询价
深圳市永贝尔科技有限公司
CEB02N6
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
深圳市金芯世纪电子有限公司
CEB02N6A
CET/華瑞
22+
SOT-263
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
CEB02N6A
CET/華瑞
24+
NA/
5280
原装现货,当天可交货,原型号开票
询价
深圳市宇集芯电子有限公司
CEB02N6
CET
24+
TO-263
90000
进口原装现货假一罚十价格合理
询价
深圳市安富世纪电子有限公司
CEB02N6
CET
23+
TO-263
7300
专注配单,只做原装进口现货
询价

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