N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

N-Channel 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.6A, RDS(ON) = 90mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package. Lead free product is acquired.

N Channel MOSFET

Enhanced GSM Processor

GENERAL DESCRIPTION TheAD6426 Enhanced GSM Processor (EGSMP) is the central component of the highly integrated AD20msp425 GSM Chipset. Offering a low total chip count, low bill of materials cost and long talk and standby times, the chipset offers designers a straightforward route to a highly co

Enhanced GSM Processor

GENERAL DESCRIPTION TheAD6426 Enhanced GSM Processor (EGSMP) is the central component of the highly integrated AD20msp425 GSM Chipset. Offering a low total chip count, low bill of materials cost and long talk and standby times, the chipset offers designers a straightforward route to a highly co

Enhanced GSM Processor

GENERAL DESCRIPTION TheAD6426 Enhanced GSM Processor (EGSMP) is the central component of the highly integrated AD20msp425 GSM Chipset. Offering a low total chip count, low bill of materials cost and long talk and standby times, the chipset offers designers a straightforward route to a highly co

22 (7/30) AWG Tinned Copper

文件：415.55 Kbytes Page：5 Pages

22 (7/30) AWG Tinned Copper

文件：415.55 Kbytes Page：5 Pages