N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

N-Channel 6 0-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

N Channel MOSFET

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 20 (7/28) AWG Tinned Copper 0.038 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.058+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLE 1061 80C 300V VW-1 20 AWG --- LLXXXX CSA AWM I A/B 80C 300 VOLTS FT1 CE ROHS {0} * = Factory

Heyco® Original Series-35 Liquid Tight Cordgrips

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4700

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1/2 ??Square Trimpot짰 Trimming Potentiometer

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Customer Specification

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