HIGH FREQUENCY, LOW JITTER, SMD OSCILLATOR FOR GIGABIT ETHERNET APPLICATIONS

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HIGH FREQUENCY, LOW JITTER, SMD OSCILLATOR FOR GIGABIT ETHERNET APPLICATIONS

文件：28.23 Kbytes Page：1 Pages

HIGH FREQUENCY, LOW JITTER, SMD OSCILLATOR FOR GIGABIT ETHERNET APPLICATIONS

文件：27.13 Kbytes Page：1 Pages

HIGH FREQUENCY, LOW JITTER, SMD OSCILLATOR FOR GIGABIT ETHERNET APPLICATIONS

文件：27.13 Kbytes Page：1 Pages

Automotive Multioutput Voltage Regulator

FEATURES „ 6 V to 45 V input range „ dc-to-dc buck converter with 5.7 V output „ Overcurrent protection with foldback, and undervoltage lockout (UVLO) „ Dual 5 V outputs – Digital 5 V ±2, 200 mA – Analog 5 V, 200 mA – Short-to-supply protection on analog regulator – Analog to digital regul

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

500Volt, 0.45Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internat

REPETITIVE AVALANCHE AND dv/dt RATED

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

HEXFET TRANSISTOR

500Volt, 0.45Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internationa

Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)