TEMPERATURE COMPENSATED ZENER DIODES

• 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRU

TEMPERATURE COMPENSATED ZENER DIODES

DESCRIPTION The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to as low as 0.0005/oC for minimal voltage change with temperature when operated at 7.5 mA. These glass axial-leaded DO-7 referen

Zener Diodes

FEATURES:• 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLEIN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159• TEMPERATURE COMPENSATED ZENER DIODES• LEADLESS PACKAGE FOR SURFACE MOUNT• 6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

包装：散装 描述：DIODE ZENER 分立半导体产品 二极管 - 齐纳 - 单

封装/外壳：DO-213AA 包装：卷带（TR） 描述：DIODE ZENER TEMP COMPENSATED 分立半导体产品 二极管 - 齐纳 - 单

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit TV Chroma Demodulator

Description: Specifically designed to match advances in color picture tube phosphors, the NTE821 is a monolithic silicon integrated circuit in a 14–Lead DIP type package and consists of three output amplifiers, a new resistor matrix, two double–balanced chroma demodulators, and a very stable bias

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

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