ZENER DIODE CHIPS

• 1N4099 THRU 1N4135 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTAC

Zener Diode Single 27V, 5%, 150Ohm, 500mW Die

Zener diode chips\nAll juntions completely protected with silicon dioxide\n0.5 watts capability with proper heat sinking\nElectrically equivalent to 1N4099 thru 1N4135\nCompatable with all wire bonding and die attach techniques, with the exception of solder relfow.;

封装/外壳：模具 包装：散装 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

CD411899B,Thyristor & Diode Modules,100 Amperes, 1800 Volts,POW-R-BLOK™ / Pow-R-BRIK™,Main Applications for POW-R-BLOKs - battery chargers, induction heating/melting, medical equipment, motor controls, power supplies, UPS, weldingMain Applicati

封装/外壳：模块 包装：散装 描述：DIODE MODULE 1.8KV 100A 分立半导体产品 二极管 - 整流器 - 阵列

RF PLL Frequency Synthesizers

GENERAL DESCRIPTION The ADF4116 family of frequency synthesizers can be used to implement local oscillators in the up-conversion and down conversion sections of wireless receivers and transmitters. They consist of a low-noise digital PFD (Phase Frequency Detector), a precision charge pump, a pr

ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER

DESCRIPTION The IL411x consists of an AlGaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual inline package, using high insulation dou

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping