CMOS Quad Exclusive-OR Gate

Features: Medium-speed operation—tpy_. tp = 65 ns (typ.) at Vpp = 10 V, C= 50 pF = 100% tested for quiescent current at 20 V Standardized, symmetrical output characteristics 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 uA at 18 V over full package- temperature ran

军用 4 通道、4 输入、3V 至 18V XOR（异或）门

CD4030B types consist of four independent Exclusive-OR gates. THe CD4030B provides the system designer with a means for direct implementation of the Exclusive-OR function.\n\n The CD4030B types are supplied in 14-lead hermetic dual-in-line ceramic packages (F3A suffix), 14-lead dual-in-lineplastic p • Medium-speed operation—tPHL, tPLH = 65 ns (typ.) at VDD = 10 V, CL = 50 pF\n• Standardized, symmetrical output characteristics\n• Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C\n• Meets all requirements of JEDEC Tentative Standard No. 13B, \"Stan;

CMOS Quad Exclusive - OR Gate

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res