位置:首页 > IC中文资料第6196页 > CD13001

型号 功能描述 生产厂家 企业 LOGO 操作
CD13001

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

CD13001

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

HMJE13001

Description The HMJE13001 is a medium power transistor designed for use in switching applications. Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed

HSMC

华昕

3 SINGLE DIGIT NUMBERIC DISPLAYS

SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C

MICRO-ELECTRONICS

3 SINGLE DIGIT NUMBERIC DISPLAYS

SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C

MICRO-ELECTRONICS

High Voltage NPN Transistor

BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Features ◇ High voltage. ◇ High speed switching Structure ◇ Silicon triple diffused type. ◇ NPN silicon transistor

TSC

台湾半导体

FULL COLOR LED LAMP FOR OUTDOOR USE

文件:69.02 Kbytes Page:1 Pages

PANASONIC

松下

CD13001产品属性

  • 类型

    描述

  • 型号

    CD13001

  • 制造商

    CDIL

  • 制造商全称

    Continental Device India Limited

  • 功能描述

    NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CD13001数据表相关新闻