位置：首页 > IC中文资料第6196页 > CD13001E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CD13001E | NPN SILICON PLANAR EPITAXIAL TRANSISTOR
| CDIL |   | |
HMJE13001 Description The HMJE13001 is a medium power transistor designed for use in switching applications. Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed | HSMC 华昕 | | ||
3 SINGLE DIGIT NUMBERIC DISPLAYS SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C | MICRO-ELECTRONICS | | ||
3 SINGLE DIGIT NUMBERIC DISPLAYS SEVEN SEGMENT NUMERIC DISPLAY Ultra high brightness red GaAlAs 3 inch Character Height High Contrast Wide Viewing Angle Common Anode - MU13001A Common Cathode - MU13001C | MICRO-ELECTRONICS | | ||
High Voltage NPN Transistor BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Features ◇ High voltage. ◇ High speed switching Structure ◇ Silicon triple diffused type. ◇ NPN silicon transistor | TSC 台湾半导体 | | ||
FULL COLOR LED LAMP FOR OUTDOOR USE 文件：69.02 Kbytes Page：1 Pages | PANASONIC 松下 | |
CD13001E产品属性
- 类型
描述
- 型号
CD13001E
- 制造商
CDIL
- 制造商全称
Continental Device India Limited
- 功能描述
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
|||
BB |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
|||
NS |
22+ |
DIP-8 |
8000 |
原装正品支持实单 |
|||
CD |
2450+ |
SOP8 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
BB |
24+ |
QFP |
670 |
||||
NS |
98 |
DIP-8 |
146 |
全新 发货1-2天 |
|||
TI |
23+ |
5000 |
全新原装,支持实单,非诚勿扰 |
||||
TI |
23+ |
NA |
20000 |
||||
TI |
23+ |
3200 |
公司只做原装，可来电咨询 |
||||
NS |
23+ |
金属DIP-.. |
7300 |
专注配单,只做原装进口现货 |
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CD13001E规格书下载地址
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DdatasheetPDF页码索引
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