3.5A,200V,0.800Ohm,N-ChannelPower

3.5A,200V,0.800Ohm,N-ChannelPowerMOSFET The2N6790isanN-ChannelenhancementmodesilicongatepowerMOSfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransis

N-CHANNELMOSFET

DESCRIPTION This2N6790UdeviceismilitaryqualifieduptoaJANTXVlevelforhigh-reliabilityapplications.Microsemialsooffersnumerousotherproductstomeethigherandlowerpowervoltageregulationapplications. FEATURES •JEDECregistered2N6790U. •JAN,JANTX,andJANTXVqualificat

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.80ohm,Id=3.5A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstate

N?밅HANNELPOWERMOSFET

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RepetitiveAvalancheRatings

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