适用于中国和日本频带的低功耗低于 1GHz 无线收发器

CC1100E 是一款 Sub-GHz 高性能射频收发器，设计旨在用于极低功耗 RF 应用。其主要针对工业、科研和医疗 (ISM) 以及 470-510 MHz 和 950-960 MHz 频带的短距离无线通信设备 (SRD)。CC1100E 特别适合于那些针对日本 ARIB STD-T96 标准和中国 470-510 MHz 短距离通信设备的无线应用。 CC1100E 在代码、封装和外引脚方面均与 CC1101[1] 和 CC1100 [2] RF 收发 器兼容。CC1100E、CC1101 以及 CC1100 均支持互补频带，可用于全球最为 常用的开放式低于 1 GHz 频率的 RF 设计 • RF 性能 \n• 低电流消耗（1.2 kBaud、480 MHz 下 RX 中为 15.5 mA）\n• 卓越的接收机选择性和阻断性能\n• 频带：470-510 MHz 和 950- 960 MHz\n• 模拟特性 \n• 快速的锁定频率合成器以及 90 μs 的建立时间使其适合于许多跳频系统。\n• 集成的模拟温度传感器\n• 数字特性 \n• 高效的 SPI 接口；利用一次“突发”数据传输便可对所有寄存器进行编程\n• 可编程信道滤波器带宽\n• 可编程前导质量指示器 (PQI)，用于随机噪声伪同步字检测增强保护\n• 支持每个数据包的链路质量指示 (LQI)\n• 低功耗特性 \;

Low-Power Sub-GHz RF Transceiver(470-510 MHz & 950-960 MHz)

文件：2.13148 Mbytes Page：98 Pages

Low-Power Sub-GHz RF Transceiver

文件：1.68499 Mbytes Page：95 Pages

Low-Power Sub-GHz RF Transceiver

文件：2.22297 Mbytes Page：97 Pages

Low-Power Sub-GHz RF Transceiver

文件：1.68499 Mbytes Page：95 Pages

Low-Power Sub-GHz RF Transceiver

文件：2.22297 Mbytes Page：97 Pages

Low-Power Sub-GHz RF Transceiver

文件：1.68499 Mbytes Page：95 Pages

Low-Power Sub-GHz RF Transceiver

文件：2.22297 Mbytes Page：97 Pages

Low-Power Sub-GHz RF Transceiver

文件：1.68499 Mbytes Page：95 Pages

包装：盒 描述：EVAL MODULE FOR CC1100 950MHZ 开发板，套件，编程器 射频评估和开发套件，开发板

包装：散装 描述：KIT EVAL MOD FOR CC1100 433MHZ 开发板，套件，编程器 射频评估和开发套件，开发板

Low-Power Sub-GHz RF Transceiver

文件：2.22297 Mbytes Page：97 Pages

Low-Power Sub- 1 GHz RF Transceiver

文件：1.75803 Mbytes Page：100 Pages

Low-Power Sub-GHz RF Transceiver

文件：2.22297 Mbytes Page：97 Pages

Low-Power Sub-GHz RF Transceiver

文件：1.68499 Mbytes Page：95 Pages

Low-Power Sub-GHz RF Transceiver(470-510 MHz & 950-960 MHz)

文件：2.13148 Mbytes Page：98 Pages

Low-Power Sub-GHz RF Transceiver

文件：2.22297 Mbytes Page：97 Pages

Low-Power Sub-GHz RF Transceiver

文件：1.68499 Mbytes Page：95 Pages

Low-Power Sub-GHz RF Transceiver(470-510 MHz & 950-960 MHz)

文件：2.13148 Mbytes Page：98 Pages

Schottky Power Rectifier(Surface Mount Power Package)

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ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

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Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N