HCMOS STANDARD CELLS

GENERAL DISCRIPTION The CB35000 standard cell series uses a high performance, low voltage, triple level metal, HCMOS5S 0.5 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity. With an average gate density of 5500 gates/mm2

HCMOS STANDARD CELLS

GENERAL DISCRIPTION\nThe CB35000 standard cell series uses a high performance, low voltage, triple level metal, HCMOS5S 0.5 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity.\nWith an average gate density of 5500 gates/mm2, the ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.\n■ 3.3 V optimized transistor with 5 V I/O inter face capability\n■ 2 - input NAND delay of 210 ps (typ) with fanout = 2.\n■ Broad I/O;

HCMOS STRUCTURED ARRAY

GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv

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