型号 功能描述 生产厂家&企业 LOGO 操作

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fast

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

封装/外壳:32-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 1MBIT PARALLEL 32TSOP 集成电路(IC) 存储器

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:32-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 1MBIT PARALLEL 32TSOP 集成电路(IC) 存储器

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:434.79 Kbytes Page:15 Pages

Catalyst

Catalyst Semiconductor

Catalyst

1MegabitCMOSFlashMemory

文件:113.3 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

1024K(128Kx8)CMOSFLASHMEMORY

28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit

IntelIntel Corporation

英特尔

Intel

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AMD

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms

GENERALDESCRIPTION TheAm28F010Aisa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedt

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AMD

1024K(128Kx8)CMOSFLASHMEMORY

文件:300.41 Kbytes Page:23 Pages

IntelIntel Corporation

英特尔

Intel

CAT28F010H产品属性

  • 类型

    描述

  • 型号

    CAT28F010H

  • 功能描述

    闪存(128x8) 1M 120ns

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-6-9 15:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
23+/24+
32-DIP
8600
只供原装进口公司现货+可订货
CSI
20+
TSSOP32
2960
诚信交易大量库存现货
CSI
23+
SMB
5000
原装正品,假一罚十
WINBOND
24+
PLCC
2000
只做原装正品现货 欢迎来电查询15919825718
ON Semiconductor
22+
32TSOP
9000
原厂渠道,现货配单
CSI
24+
TSSOP32
90000
进口原装现货假一罚十价格合理
CSI
23+
DIP-32P
8560
受权代理!全新原装现货特价热卖!
CSI
2016+
DIP32
9000
只做原装,假一罚十,公司可开17%增值税发票!
CSI
2023+
PLCC32
6893
十五年行业诚信经营,专注全新正品
CATALYST
22+
TSOP
12245
现货,原厂原装假一罚十!

CAT28F010H芯片相关品牌

  • Catalyst
  • CUI
  • CUID
  • Everlight
  • FORYARD
  • HIROSE
  • Nanya
  • Toko
  • TOPPOWER
  • TOREX
  • UNSEMI
  • VCC

CAT28F010H数据表相关新闻

  • CAT25320YI-GT3

    CAT25320YI-GT3

    2023-4-24
  • CAT25256VI-GT3

    CAT25256VI-GT3

    2023-4-24
  • CAT4139TD-GT3

    进口代理

    2022-12-10
  • CAT25320VI-GT3

    CAT25320VI-GT3ON20+标准封装 CM1213A-02SRON20+标准封装 CAT32TDI-GT3ON20+标准封装 CAT5172TBI-00GT3ON20+标准封装 CAT4101TV-T75ON20+标准封装 CAT24C04WI-GT3ON20+标准封装 CAT25160VI-GT3ON20+标准封装 CAT24C512XI-T2ON20+标准封装 CAT25010YI-GT3ON20+标准封装 CAT1023WI-42-GT

    2021-6-5
  • CAT431L-低电压可调节精密电压基准

    特征低启动过冲当前操作宽:40渭一至100mA低温度系数参考:12毫伏最大偏差过温准确的1.24V参考电压:+0.5%(六毫伏)25°C低动态阻抗:0.3在1kHz惟紧凑型3引脚SOT23封装选项工业温度范围:-40°C至85°C可调输出电压:至6V的VREF...应用开关电源控制回路并联稳压器低温度系数电压参考电

    2013-3-24
  • CAT3200-低噪声稳压电荷泵DC-DC转换器

    特点恒定的高频率(高达2MHz)操作100mA输出电流稳压输出电压(5V固定CAT3200-5,可调节的CAT3200)低静态电流(1.7毫安典型值)。低至2.7V的输入电压操作软启动,摆率控制热过载关断保护低价值的外部电容(1μF)折返电流过载保护关断电流小于1μA在低调CAT3200-5(1毫米薄)6引脚SOT23封装CAT3200在MSOP-8封装CAT3

    2012-12-27