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CA308晶体管资料
CA3086别名：CA3086三极管、CA3086晶体管、CA3086晶体三极管
CA3086生产厂家：中国大陆半导体企业
CA3086制作材料：Si-N+Darl
CA3086性质：
CA3086封装形式：
CA3086极限工作电压：
CA3086最大电流允许值：0.05A
CA3086最大工作频率：<1MHZ或未知
CA3086引脚数：
CA3086最大耗散功率：0.5W
CA3086放大倍数：
CA3086图片代号：NO
CA3086vtest：0
CA3086htest：999900
- CA3086atest：0.05
CA3086wtest：0.5
CA3086代换 CA3086用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | Intersil |   | ||
2MHz, Operational Transconductance Amplifier (OTA) 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance-amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High-Performance Operational Transcon | RENESAS 瑞萨 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transconductance Amplifier (OTA) 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance-amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High-Performance Operational Transcon | RENESAS 瑞萨 | | ||
2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | Intersil | | ||
2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | Intersil | | ||
2MHz, Operational Transconductance Amplifier (OTA) 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance-amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High-Performance Operational Transcon | RENESAS 瑞萨 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transconductance Amplifier (OTA) 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance-amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High-Performance Operational Transcon | RENESAS 瑞萨 | | ||
2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | Intersil | | ||
2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | Intersil | | ||
2MHz, Operational Transconductance Amplifier (OTA) 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance-amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High-Performance Operational Transcon | RENESAS 瑞萨 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transconductance Amplifier (OTA) 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance-amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High-Performance Operational Transcon | RENESAS 瑞萨 | | ||
2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | Intersil | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transconductance Amplifier (OTA) 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance-amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High-Performance Operational Transcon | RENESAS 瑞萨 | | ||
2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | Intersil | | ||
2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | Intersil | | ||
2MHz, Operational Transconductance Amplifier (OTA) 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance-amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High-Performance Operational Transcon | RENESAS 瑞萨 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
2MHz, Operational Transcondictance Amplifier (OTA) Slew Rate The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductance amplifier (OTA) concept described in Application Note AN6668, “Applications of the CA3080 and CA3080A High Performance Operational Transconductance Amplifiers”. The CA3080 and CA3080A types h | ROCHESTER 罗切斯特 | | ||
HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving | ROCHESTER 罗切斯特 | | ||
General Purpose High Current NPN Transistor Arrays CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com | Intersil | | ||
HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving | ROCHESTER 罗切斯特 | | ||
HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving | ROCHESTER 罗切斯特 | | ||
General Purpose High Current NPN Transistor Arrays CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com | Intersil | | ||
General Purpose High Current NPN Transistor Arrays CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com | Intersil | | ||
HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving | ROCHESTER 罗切斯特 | | ||
HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving | ROCHESTER 罗切斯特 | | ||
General Purpose High Current NPN Transistor Arrays CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com | Intersil | | ||
HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving | ROCHESTER 罗切斯特 | | ||
HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array HIGH CURRENT NPN TRANSISTOR for general purpose applications The CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common collector confguration. The CA3081 and CA3082 are capable of directly driving | ROCHESTER 罗切斯特 | | ||
General Purpose High Current NPN Transistor Arrays CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com | Intersil | | ||
General Purpose High Current NPN Transistor Arrays CA3081 and CA3082 consist of seven high current (to 100mA) silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. Features • CA3081 - Common Emitter Array • CA3082 - Com | Intersil | | ||
General Purpose High Current NPN Transistor Array General Purpose High Current NPN Transistor Array The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low current (i.e., 1mA) for applications in which offset paramet | Intersil | | ||
General Purpose High Current NPN Transistor Array General Purpose High Current NPN Transistor Array The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low current (i.e., 1mA) for applications in which offset paramet | Intersil | | ||
General Purpose High Current NPN Transistor Array General Purpose High Current NPN Transistor Array The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low current (i.e., 1mA) for applications in which offset paramet | Intersil | | ||
Positive Voltage Regulators from 1.7 to 46V at Currents Up to 100mA Description The CA3085, CA3085A, and CA3085B are silicon monolithic integrated circuits designed specifically for service as voltage regulators and output voltage ranging from 1.7V to 45V at currents up 100 milliamperes. | HARRIS | | ||
Positive Voltage Regulators from 1.7 to 46V at Currents Up to 100mA Description The CA3085, CA3085A, and CA3085B are silicon monolithic integrated circuits designed specifically for service as voltage regulators and output voltage ranging from 1.7V to 45V at currents up 100 milliamperes. | HARRIS | | ||
Positive Voltage Regulators from 1.7 to 46V at Currents Up to 100mA Description The CA3085, CA3085A, and CA3085B are silicon monolithic integrated circuits designed specifically for service as voltage regulators and output voltage ranging from 1.7V to 45V at currents up 100 milliamperes. | HARRIS | | ||
Positive Voltage Regulators from 1.7 to 46V at Currents Up to 100mA Description The CA3085, CA3085A, and CA3085B are silicon monolithic integrated circuits designed specifically for service as voltage regulators and output voltage ranging from 1.7V to 45V at currents up 100 milliamperes. | HARRIS | | ||
Positive Voltage Regulators from 1.7 to 46V at Currents Up to 100mA Description The CA3085, CA3085A, and CA3085B are silicon monolithic integrated circuits designed specifically for service as voltage regulators and output voltage ranging from 1.7V to 45V at currents up 100 milliamperes. | HARRIS | | ||
Positive Voltage Regulators from 1.7 to 46V at Currents Up to 100mA Description The CA3085, CA3085A, and CA3085B are silicon monolithic integrated circuits designed specifically for service as voltage regulators and output voltage ranging from 1.7V to 45V at currents up 100 milliamperes. | HARRIS | | ||
General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power | Intersil | | ||
General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power | Intersil | | ||
General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power | Intersil | | ||
General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power | Intersil | | ||
General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power | Intersil | | ||
General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power | Intersil | | ||
General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power | Intersil | | ||
General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power | Intersil | | ||
AM Receiver Subsystem and General-Purpose Amplifier Array Description The CA3088E, a monolithic integrated circuit, is an AM subsystem that provides the converter, IF amplifier, detector, and audio preamplifier stages for an AM receiver. Features • Excellent Overload Characteristics • AGC for IF Amplifier • Buffered Output Signal for Tuning Meter • | Intersil | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Integrated Circuit Operational Transconductance Amplifier | NTE | NTE | |
CA308产品属性
- 类型
描述
- 型号
CA308
- 制造商
Energizer Battery Company
- 功能描述
BATTERY LI-ION CANON BP308
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
24+ |
NA/ |
8445 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HAR |
23+ |
DIP-16 |
20000 |
全新原装假一赔十 |
|||
INTERSIL |
25+ |
DIP-16 |
32360 |
INTERSIL全新特价CA3089E即刻询购立享优惠#长期有货 |
|||
HARRIS/哈里斯 |
25+ |
DIP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INTERSIL |
0018+ |
DIP |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
22+ |
5000 |
||||||
HAR |
25+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
INTERSIL |
23+ |
DIP16 |
30000 |
原装现货,假一赔十. |
|||
HAR |
2450+ |
DIP |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HARRIS |
25+ |
DIP |
3000 |
全新原装、诚信经营、公司现货销售! |
CA308规格书下载地址
CA308参数引脚图相关
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- cmos传感器
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- cicret
- cd4543
- cd4066
- cd4051
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- cd4011
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- ccd图像传感器
- ccd传感器
- CCD
- cbb电容
- cbb60
- capsense
- can总线
- ca851
- ca3410
- CA3090AQ
- CA3090AB
- CA30900
- CA3090
- CA3089F
- CA-3089E
- CA3089E
- CA-3088E
- CA3088E
- CA3086E
- CA3086
- CA3085B
- CA3085A
- CA3085
- CA3083Z
- CA3083M
- CA-3083
- CA3083
- CA3082M
- CA3082F
- CA3082
- CA3081M
- CA3081F
- CA3081E
- CA3081
- CA3080X
- CA3080S
- CA3080M
- CA3080E
- CA3080A
- CA3080
- CA307G
- CA307E
- CA3079E
- CA3079
- CA3078T
- CA3078S
- CA3078M
- CA3078E
- CA3078A
- CA3078
- CA3076T
- CA3076
- CA3075E
- CA3075
- CA3072E
- CA3072
- CA3071E
- CA3071
- CA3070G
- CA3070E
- CA3070
- CA307
- CA3068
- CA3067E
- CA3067AE
- CA3067
- CA3064E
- CA3064
- CA3060E
- CA3060
- CA3059
- CA3058
- CA3054
- CA3053E
- CA3053
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CA3275双全桥驱动器是用于generalpurpose需要双路全桥驱动器的应用程序或交换，包括方向和脉宽调制位置控制。虽然可能无法使用所有功能的IC或要求，他们通常会被用来在仪器仪表正交线圈系统，如空气芯计，将在广泛的频率驱动线圈从200Hz至400Hz。线圈包裹在90度为独立方向控制的角度。在这个线圈伤口物理配置的脉宽调制控制，其中每个线圈的驱动器是一个正弦或余弦函数运动度的关系。使用方向控制改变目前的H -驱动线圈的方向。该集成电路的开关速率能力通常是30kHz的，无论电感性负载。过电流限制是用来限制短路电流。过电压保护（在范围为18V至24V），导致该设备关闭输出电流驱动。热关断功耗
2012-12-6CA1524-调整脉宽调制器
特点 •完整的PWM电源控制电路 •独立输出为单端或推挽操作 •线路和负载调节............. 0.2％（典型值） •在整个温度范围1％（最大）振荡器和参考电压变化的内部参考电源 •待机电流小于10mA •超越100kHz的操作频率 •可变输出的死区时间为0.5μs至为5μs •低VCE（SAT）的温度范围内 应用 •正面和负面的稳压电源
2012-12-3CA3273-高边驱动器
CA3273是相当于一个PNP通晶体管电源IC经营作为在任的高边驱动器的电流开关饱和（ON）或截止（关）模式。在CA3273集成的电路保护通过电流，过度输入电压和热过载。高侧驱动器用于通用汽车和潜在高压力应用。如果存在高应力条件下，使用外部齐纳二极管的35V或较少之间的供应和负载终端可能需要防止损坏由于严重的条件，如负载突降，反向电池（和积极或消极的瞬态的）。 CA3273是设计承受的标称电池反向（VBAT=13V）条件，没有永久损坏集成电路。 CA3273是提供修改后的3引脚TO -202塑料功率封装。 应用 •燃油泵驱动器 &#
2012-11-14
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