CHANNEL PHOTO MULTIPLIER

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA952 is designed for use in output stages of portable radio and cassette type tape recorder, general purpose applications.

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

SUBMINIATURE POWER RELAY

[AZETTILER] FEATURES • Subminiature size for high density packaging • Coil sensitivity to 116 mW • Extremely low cost • Coils to 24 VDC • Epoxy sealed for automatic wave soldering • 1 Amp, 3 Amp & 5 Amp contacts • Life expectancy to 10 million operations • UL, CUR file E43203

CONN PLUG USB3.0 MICRO USB B SLD

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EL Flowing Effect Wire with Inverter - Green 2.0 meter (6.5 ft)

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