型号 功能描述 生产厂家 企业 LOGO 操作
C670

500 WATTS (AC) DC/D CSINGLE OUTPUT

Features • Single Output • 3U x 42TE x 166.5mm • Weight: 3.5kg

POWERBOX

main ratings

Description SIPMOS, N-channel, enhancement mode

SIEMENS

西门子

FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)

• Fast recovery epitaxial diode • Soft recovery characteristics

SIEMENS

西门子

FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)

FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics

SIEMENS

西门子

FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)

FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics

SIEMENS

西门子

FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)

FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics

SIEMENS

西门子

Fast switching diode chip in EMCON-Technology

FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient This chip is used for: • EUPEC power modules and discrete devices Applications: • SMPS, resonant applications, drives

Infineon

英飞凌

main ratings

Description : FREDFET with fast-recovery reverse diode, N-channel, enhancement mode

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)

IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Doubled diode area • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate)

IGBT Power Module • Single switch with chopper diode • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)

IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal

SIEMENS

西门子

IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)

• Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)

IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 27 Ohm

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 22 Ohm

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

• Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 15 Ohm

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 10 Ohm

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm

SIEMENS

西门子

Diode Power Module

Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166

eupec

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

VDS = 100 V I D = 200 A RDS(on) = 8.5 mΩ ● Power module ● Single switch ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

SIMOPAC® Module ● Power module ● Single switch ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

main ratings

SIEMENS

西门子

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

VDS = 1000 V ID = 28 A RDS(on) = 0.37 Ω ● Power module ● Single switch ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

VDS = 100 V I D = 200 A RDS(on) = 8.5 mΩ ● Power module ● Single switch ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)

SIMOPAC® Module ● Power module ● Single switch ● FREDFET ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)

VDS = 800 V ID = 34 A RDS(on) = 0.32 Ω ● Power module ● Single switch ● FREDFET ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)

VDS = 1000 V ID = 28 A RDS(on) = 0.42 Ω ● Power module ● Single switch ● FREDFET ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

• Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

• Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

• Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

• Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

• Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes)

• Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes)

• Low Loss IGBT • Low inductance single switch • Including fast free- wheeling diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes

IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

SIEMENS

西门子

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

SIMOPAC® Module VDS = 100 V ID = 200 A RDS(on) = 8.5 mΩ ●Power module ●Single switch ●N channel ●Enhancement mode ●Package with insulated metal base plate ●Package outline/Circuit diagram: 11)

SIEMENS

西门子

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

VDS = 200 V I D = 130 A RDS(on) = 20 mΩ ● Power module ● Single switch ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

SIMOPAC® Module VDS = 50 V I D = 200 A RDS(on) = 3.0 mΩ ● Power module ● Single switch ● N channel ● Enhancement mode ● Package with insulated metal base plate ● Package outline/Circuit diagram: 11)

SIEMENS

西门子

TWO CHANNEL PROFET

Discription PROFETR an Intellgent Power switch with integrated protectlon against self-destruction

SIEMENS

西门子

main ratings

Description SIPMOS, N-channel, enhancement mode

SIEMENS

西门子

main ratings

Description SIPMOS, N-channel, enhancement mode

SIEMENS

西门子

main rationgs

Description SIPMOS, N-channel, enhancement mode

SIEMENS

西门子

main ratings

Description SIPMOS, N-channel, enhancement mode

SIEMENS

西门子

main ratings

Description SIPMOS, N-channel, enhancement mode

SIEMENS

西门子

main ratings

Description : FREDFET with fast-recovery reverse diode, N-channel, enhancement mode

SIEMENS

西门子

C670产品属性

  • 类型

    描述

  • 型号

    C670

  • 制造商

    POWERBOX

  • 制造商全称

    Powerbox

  • 功能描述

    500 WATTS(AC) DC/D CSINGLE OUTPUT

更新时间:2025-12-19 18:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Texas Instruments
20+
BGA-272
15988
TI全新DSP-可开原型号增税票
N/A
25+
SMD
10000
原装进口支持检测
Tch Time
25+
181
公司优势库存 热卖中!
TI
24+
6
Texas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
HARRIS
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
INFINEON
23+
TO218AA TUBE25
8000
专注配单,只做原装进口现货
INFINEON
23+
TO218AA TUBE25
7000
TI
16+
PBGA
10000
原装正品
TI
24+
272-BGA(27x27)
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!

C670数据表相关新闻