位置：首页 > IC中文资料 > C4D08120AIC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m | WOLFSPEED |   | ||
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET | Cree 科锐 | | ||
Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H | WOLFSPEED | | ||
Silicon Carbide Schottky Diode Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET | Cree 科锐 | | ||
Silicon Carbide Schottky Diode 文件：3.06946 Mbytes Page：5 Pages | LUGUANG 鲁光电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE/科锐 |
24+ |
NA/ |
1078 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CREE |
18+ |
TO-252 |
478 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CREE/科锐 |
25+ |
TO-252 |
30 |
原装正品,假一罚十! |
|||
CREE |
25+ |
960 |
只做原装鄙视假货15118075546 |
||||
ALCATEL |
24+ |
QFP |
6618 |
公司现货库存,支持实单 |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
CREE(科锐) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
CREE |
23+ |
TO252 |
7000 |
||||
CREE全系列可接受订货 |
23+ |
NA |
9808 |
CREE进口代理原装优势供应全系列可订货QQ1304306553 |
|||
Wolfspeed |
24+ |
NA |
3000 |
进口原装正品优势供应 |
C4D08120AIC规格书下载地址
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C4D08120AIC数据表相关新闻
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DdatasheetPDF页码索引
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