4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

碳化硅肖特基二极管

SiC肖特基二极管

Schottky Rectifier

Silicon Carbide Schottky Diode

文件：714.83 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 1.2KV 8A TO252-2 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

文件：907.89 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：DIODE SCHOTTKY 1.2KV 24.5A TO252 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

文件：3.06946 Mbytes Page：5 Pages