Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Lo

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 1.2KV 5A TO252-2 分立半导体产品 二极管 - 整流器 - 单

SiC肖特基二极管

1200 V Discrete Silicon Carbide Schottky Diodes

Silicon Carbide Schottky Diode

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 1.2KV 19A TO252-2 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Swtitching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency •

SiC Schottky Barrier Diode

FEATURES · 1.2kV Schottky Rectifier · Extremely Fast Switching · High-Frequency Operation APPLICATIONS · Switch Mode Power Supplies · Motor Drives · DC-DC Converters

4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode

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