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C451价格

参考价格：￥343.8146

型号：C451 品牌：Coilcraft 备注：这里有C451多少钱，2025年最近7天走势，今日出价，今日竞价，C451批发/采购报价，C451行情走势销售排行榜，C451报价。

型号	功能描述	生产厂家企业	LOGO
C451	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451	Phase Control SCR 文件：97.82 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
C451	工业胶带	3M	3M
C451	Phase Control SCR	NJS	NJS
C451	Phase Control SCR 1500 Amperes Average 2400 Volts	POWEREX	POWEREX
C4512	Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) Application : Audio and General Purpose Complement to type 2SA1726	Sanken 三垦	Sanken
C4517	Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications	ISC 无锡固电	ISC
C451E1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451E2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451L	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451LB	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451LD	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451M1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451M2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451N1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451N2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451P1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451P2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PA1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PA2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PB1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PB2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PC1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PC2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PD	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451PD1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PD2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PE1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PE2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PM	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451PM	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451PM1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PM2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PN	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451PN1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PN2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PS1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PS2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451S1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451S2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451T1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451T2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C4511	Silicon NPN Power Transistors 文件：247.87 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
C4511	Silicon NPN Triple Diffused Planar Transistor 文件：32.42 Kbytes Page：1 Pages	Sanken 三垦	Sanken
C451-1	Phase Control SCR 文件：97.82 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
C451-2	Phase Control SCR 文件：97.82 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
C4516SDWN3S1-RGBC0120-2H	封装/外壳：6-SMD，无引线包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：PLCC SIDE VIEW SMD - RGB + IC 光电器件 LED 指示 - 分立	ETC 知名厂家	ETC
C451PN	TRIODES,POWER,REVERSE-BLOCKlNG:SCRS 文件：83.45 Kbytes Page：1 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
451	Ribbon Cable Wiremount Socket Assembly 文件：126.46 Kbytes Page：2 Pages	3M	3M
451	Capacity (20-hour) 180Ah 文件：304.56 Kbytes Page：1 Pages	GSYUASABATTERY	GSYUASABATTERY
451	Low-Cost, Versatile, 10/100kHz Frequency to Voltage Converters 文件：44.12 Kbytes Page：1 Pages	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
451	NANO2 FUSE Very Fast-Acting 451/453 Series 文件：102.39 Kbytes Page：1 Pages	Littelfuse 力特	Littelfuse
451	Low-Cost, Versatile, 10/100kHz Frequency to Voltage Converters 文件：1.47546 Mbytes Page：6 Pages	INTRONICS	INTRONICS

C451产品属性

类型
描述
型号
C451
功能描述
电感器套件及配件 Power Inductor Kit 0.68-22 uH Values
RoHS
否
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C451供应商更多...

更新时间：2025-10-4 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	C4516SDWN3S1-RGBC0120-2H(TS)	EVERLIGHT(亿光)	24+	SMD	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	C451G	NEC	24+	NA/	1505	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市科芯源微电子有限公司	C451G	NEC	25+	SOP14	1565	原装正品,假一罚十!	询价
深圳市明嘉莱科技有限公司	C451G	NEC	24+	SOP14	880000	明嘉莱只做原装正品现货	询价
深圳市汇莱威科技有限公司	C451PM2	PRX	18+	MODULE	1290	主打模块,大量现货供应商QQ2355605126	询价
深圳市胜彬电子有限公司	C451MA4	NEC	22+	SOP14	8000	原装正品支持实单	询价
深圳市毅创腾电子科技有限公司	C451PM-2	POWEREX	23+	模块	362	全新原装正品,量大可订货!可开17%增值票!价格优势!	询价
深圳市一线半导体有限公司	C451G		24+	SOP	48		询价
标准国际(香港)有限公司	C4517A				50	全新原装!优势库存热卖中!	询价
深圳市向鸿伟业电子有限公司	C451G	荣盛电子	2403+	SOP	11809	原装现货!欢迎随时咨询!	询价

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C451价格

C451产品属性

C451供应商更多...

C451芯片相关品牌

C451规格书下载地址

C451参数引脚图相关

C451数据表相关新闻

C3M0160120D封装TO-247-3场效应管N沟道MOSFET管mos管原装现货

C44UVGT5900T81K电容器

C4532X7R1H475KT000N原装贴片电容TDK18138231376

C3D10060A

C4532X7R3D222KT000N深圳市光华微科技有限公司18138231376

C4532X5R1A476M280KA电容中文资料规格书深圳市凌丰发微电子有限公司

DdatasheetPDF页码索引