位置:首页 > IC中文资料第890页 > C451
C451价格
参考价格:¥343.8146
型号:C451 品牌:Coilcraft 备注:这里有C451多少钱,2025年最近7天走势,今日出价,今日竞价,C451批发/采购报价,C451行情走势销售排行榜,C451报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
C451 | PhaseControlSCR1500AmperesAverage2400Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | ||
C451 | PhaseControlSCR 文件:97.82 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
SiliconNPNTripleDiffusedPlanarTransistor(AudioandGeneralPurpose) Application:AudioandGeneralPurpose Complementtotype2SA1726 | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Highvoltageswitchingtransistor APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1500AmperesAverage2400Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1500AmperesAverage2400Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1500AmperesAverage2400Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1500AmperesAverage2400Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1500AmperesAverage2400Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1500AmperesAverage2400Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1500AmperesAverage2400Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR1400-1500AmperesAvg500-1800Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
SiliconNPNPowerTransistors 文件:247.87 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNTripleDiffusedPlanarTransistor 文件:32.42 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 | |||
PhaseControlSCR 文件:97.82 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PhaseControlSCR 文件:97.82 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
封装/外壳:6-SMD,无引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:PLCC SIDE VIEW SMD - RGB + IC 光电器件 LED 指示 - 分立 | ETC 知名厂家 | ETC | ||
TRIODES,POWER,REVERSE-BLOCKlNG:SCRS 文件:83.45 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
RibbonCableWiremountSocketAssembly 文件:126.46 Kbytes Page:2 Pages | 3M 3M Electronics | |||
Capacity(20-hour)180Ah 文件:304.56 Kbytes Page:1 Pages | GSYUASABATTERY GS Yuasa Battery Sales UK Ltd | |||
Low-Cost,Versatile,10/100kHzFrequencytoVoltageConverters 文件:1.47546 Mbytes Page:6 Pages | INTRONICS Intronics Power, Inc. | |||
Low-Cost,Versatile,10/100kHzFrequencytoVoltageConverters 文件:44.12 Kbytes Page:1 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
NANO2FUSEVeryFast-Acting451/453Series 文件:102.39 Kbytes Page:1 Pages | Littelfuselittelfuse 力特力特公司 |
C451产品属性
- 类型
描述
- 型号
C451
- 功能描述
电感器套件及配件 Power Inductor Kit 0.68-22 uH Values
- RoHS
否
- 制造商
Bourns
- 产品
SMD Inductor Kits
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
20+ |
SOP-14 |
2960 |
诚信交易大量库存现货 |
|||
NEC |
24+ |
NA/ |
1505 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
25+ |
SOP14 |
1565 |
原装正品,假一罚十! |
|||
NEC |
24+ |
SOP14 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
24+ |
SOP14 |
80 |
大批量供应优势库存热卖 |
|||
PRX |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
|||
ON |
2025+ |
SOP14 |
3720 |
全新原厂原装产品、公司现货销售 |
|||
NEC |
2016+ |
SOP14 |
6528 |
只做进口原装现货!假一赔十! |
|||
PRX |
18+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
NEC |
22+ |
SOP14 |
8000 |
原装正品支持实单 |
C451规格书下载地址
C451参数引脚图相关
- ccd图像传感器
- ccd传感器
- CCD
- cbb电容
- cbb60
- capsense
- can总线
- ca851
- ca3410
- ca158
- ca1558
- ca1458
- ca139
- ca121
- c960
- c903
- c9012
- c901
- C80
- c62f
- C4520CH3F120K085KA
- C4520CH3F101K200KA
- C4520CH3F100F085KA
- C4520C0G3F820K200KA
- C4520C0G3F680K200KA
- C4520C0G3F560K200KA
- C4520C0G3F470K160KA
- C4520C0G3F390K160KA
- C4520C0G3F330K160KA
- C4520C0G3F270K160KA
- C4520C0G3F220K110KA
- C4520C0G3F180K110KA
- C4520C0G3F150K110KA
- C4520C0G3F120K085KA
- C4520C0G3F101K200KA
- C4520C0G3F100F085KA
- C4520C0G3F100F
- C451PD
- C451PC2
- C451PC1
- C451PB2
- C451PB1
- C451PA2
- C451PA1
- C451P2
- C451P1
- C451N2
- C451N1
- C451M2
- C451M1
- C451LD
- C451LB
- C451L
- C451E2
- C451E1
- C45-144P
- C45-144
- C451-2
- C45-12
- C451-1
- C450T2
- C450T1
- C450S2
- C450S1
- C450PM
- C450PD2
- C450PD1
- C450PD
- C450PC2
- C450PC1
- C450PB2
- C450PB1
- C450PB
- C450PA2
- C450PA1
- C450P2
- C450P1
- C450P
- C450N2
- C450N1
- C450
- C44UUGQ6320F8SK
- C44UUGQ6250F8SK
- C44UQGT6420A8SX
- C44UQGQ6500F8SK
- C44UQGQ6330F8SK
- C44UOGQ6600F8SK
- C44PKGR6200AASJ
- C44PFGR6400ZA0J
- C44HFG35800ZB0J
- C44HFG35400ZB0J
- C44APFP4500ZB0J
- C44AHGP5750ZA0J
- C44AFGR6200ZE0J
- C44AFGP6200ZE0J
- C44AFGP6150ZA0J
- C44AFGP6100ZG0J
- C44AFFP5500ZE0J
- C449
- C445
C451数据表相关新闻
C3M0160120D封装TO-247-3场效应管N沟道MOSFET管mos管原装现货
C3M0160120D封装TO-247-3场效应管N沟道MOSFET管mos管原装现货
2025-2-28C44UVGT5900T81K电容器
KEMET的电容器在恶劣环境下具有300,000小时的使用寿命
2024-4-8C4532X7R1H475KT000N原装贴片电容TDK18138231376
产品等级:优级品 封装:SMD 耐压值:50(V) 批号:17+ 外形:方块状 应用范围:通用 允许偏差:±10(%
2019-10-17C3D10060A
C3D10060A,全新原装当天发货或门市自取0755-82732291.
2019-9-6C4532X7R3D222KT000N深圳市光华微科技有限公司18138231376
TDK车规全系列欢迎来电全系列
2019-6-22C4532X5R1A476M280KA电容中文资料规格书深圳市凌丰发微电子有限公司
C4532X5R1A476M280KATDK电容
2019-3-7
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100