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C451价格
参考价格：￥343.8146
型号：C451 品牌：Coilcraft 备注：这里有C451多少钱，2026年最近7天走势，今日出价，今日竞价，C451批发/采购报价，C451行情走势销售排行榜，C451报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
C451 | Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX |   | |
C451 | Phase Control SCR 文件：97.82 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
C451 | Phase Control SCR 1500 Amperes Average 2400 Volts | POWEREX | | |
C451 | 工业胶带 | 3M | | |
C451 | Phase Control SCR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) Application : Audio and General Purpose Complement to type 2SA1726 | SANKEN 三垦 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications | ISC 无锡固电 | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability | POWEREX | | ||
Silicon NPN Triple Diffused Planar Transistor 文件：32.42 Kbytes Page：1 Pages | SANKEN 三垦 | | ||
Silicon NPN Power Transistors 文件：247.87 Kbytes Page：4 Pages | SAVANTIC | | ||
Phase Control SCR 文件：97.82 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Phase Control SCR 文件：97.82 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
封装/外壳：6-SMD，无引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PLCC SIDE VIEW SMD - RGB + IC 光电器件 LED 指示 - 分立 | ETC 知名厂家 | ETC | | |
TRIODES,POWER,REVERSE-BLOCKlNG:SCRS 文件：83.45 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
GENERAL PURPOSE RECTIFIER
| POWEREX | | ||
Single Supply, Low-Power, High Output, Programmable Buffer 文件：252.48 Kbytes Page：12 Pages | NSC 国半 | | ||
Single Supply, Low-Power, High Output, Programmable Buffer 文件：252.48 Kbytes Page：12 Pages | NSC 国半 | | ||
Silicon N-Channel JFET Transistor VHF/UHF Amplifier 文件：23.15 Kbytes Page：2 Pages | NTE | |
C451产品属性
- 类型
描述
- 型号
C451
- 功能描述
电感器套件及配件 Power Inductor Kit 0.68-22 uH Values
- RoHS
否
- 制造商
Bourns
- 产品
SMD Inductor Kits
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
25+ |
3.9 |
2987 |
绝对全新原装现货供应! |
|||
NEC |
22+ |
SOP14 |
8000 |
原装正品支持实单 |
|||
POWEREX |
23+ |
模块 |
362 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
24+ |
SOP |
48 |
|||||
25+ |
50 |
全新原装!优势库存热卖中! |
|||||
荣盛电子 |
2403+ |
SOP |
11809 |
原装现货!欢迎随时咨询! |
|||
PRX |
25+ |
MODULE |
63 |
主打螺丝模块系列 |
|||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
NEC |
20+ |
SOP-14 |
2960 |
诚信交易大量库存现货 |
|||
ON |
2025+ |
SOP14 |
3720 |
全新原厂原装产品、公司现货销售 |
C451规格书下载地址
C451参数引脚图相关
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- C4520C0G3F120K085KA
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- C451PD
- C451PC2
- C451PC1
- C451PB2
- C451PB1
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- C451PA1
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- C451N2
- C451N1
- C451M2
- C451M1
- C451LD
- C451LB
- C451L
- C451E2
- C451E1
- C45-144P
- C45-144
- C451-2
- C45-12
- C451-1
- C450T2
- C450T1
- C450S2
- C450S1
- C450PM
- C450PD2
- C450PD1
- C450PD
- C450PC2
- C450PC1
- C450PB2
- C450PB1
- C450PB
- C450PA2
- C450PA1
- C450P2
- C450P1
- C450P
- C450N2
- C450N1
- C450
- C44UUGQ6320F8SK
- C44UUGQ6250F8SK
- C44UQGT6420A8SX
- C44UQGQ6500F8SK
- C44UQGQ6330F8SK
- C44UOGQ6600F8SK
- C44PKGR6200AASJ
- C44PFGR6400ZA0J
- C44HFG35800ZB0J
- C44HFG35400ZB0J
- C44APFP4500ZB0J
- C44AHGP5750ZA0J
- C44AFGR6200ZE0J
- C44AFGP6200ZE0J
- C44AFGP6150ZA0J
- C44AFGP6100ZG0J
- C44AFFP5500ZE0J
- C449
- C445
C451数据表相关新闻
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2024-4-8C4532X7R1H475KT000N原装贴片电容TDK18138231376
产品等级： 优级品 封装： SMD 耐压值： 50（V） 批号： 17+ 外形： 方块状 应用范围： 通用 允许偏差： ±10（%
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2019-6-22C4532X5R1A476M280KA电容中文资料规格书深圳市凌丰发微电子有限公司
C4532X5R1A476M280KA TDK 电容
2019-3-7
DdatasheetPDF页码索引
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