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C451价格

参考价格：￥343.8146

型号：C451 品牌：Coilcraft 备注：这里有C451多少钱，2026年最近7天走势，今日出价，今日竞价，C451批发/采购报价，C451行情走势销售排行榜，C451报价。

型号	功能描述	生产厂家企业	LOGO
C451	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451	Phase Control SCR 文件：97.82 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
C451	Phase Control SCR 1500 Amperes Average 2400 Volts	POWEREX	POWEREX
C451	工业胶带	3M	3M
C451	Phase Control SCR	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
C4512	Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) Application : Audio and General Purpose Complement to type 2SA1726	SANKEN 三垦	SANKEN
C4517	Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications	ISC 无锡固电	ISC
C451E1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451E2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451L	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451LB	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451LD	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451M1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451M2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451N1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451N2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451P1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451P2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PA1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PA2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PB1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PB2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PC1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PC2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PD	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451PD1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PD2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PE1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PE2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PM	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451PM	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451PM1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PM2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PN	Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H	POWEREX	POWEREX
C451PN1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PN2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PS1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451PS2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451S1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451S2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451T1	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C451T2	Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying (di/namic) gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability	POWEREX	POWEREX
C4511	Silicon NPN Triple Diffused Planar Transistor 文件：32.42 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN
C4511	Silicon NPN Power Transistors 文件：247.87 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
C451-1	Phase Control SCR 文件：97.82 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
C451-2	Phase Control SCR 文件：97.82 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
C4516SDWN3S1-RGBC0120-2H	封装/外壳：6-SMD，无引线包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：PLCC SIDE VIEW SMD - RGB + IC 光电器件 LED 指示 - 分立	ETC 知名厂家	ETC
C451PN	TRIODES,POWER,REVERSE-BLOCKlNG:SCRS 文件：83.45 Kbytes Page：1 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
A451	GENERAL PURPOSE RECTIFIER	POWEREX	POWEREX
CLC451	Single Supply, Low-Power, High Output, Programmable Buffer 文件：252.48 Kbytes Page：12 Pages	NSC 国半	NSC
CLC451AJ	Single Supply, Low-Power, High Output, Programmable Buffer 文件：252.48 Kbytes Page：12 Pages	NSC 国半	NSC
NTE451	Silicon N-Channel JFET Transistor VHF/UHF Amplifier 文件：23.15 Kbytes Page：2 Pages	NTE	NTE

C451产品属性

类型
描述
型号
C451
功能描述
电感器套件及配件 Power Inductor Kit 0.68-22 uH Values
RoHS
否
制造商
Bourns
产品
SMD Inductor Kits

C451供应商更多...

更新时间：2026-5-24 16:42:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市胜彬电子有限公司	C451MA4	NEC	22+	SOP14	8000	原装正品支持实单	询价
深圳市一线半导体有限公司	C451G		24+	SOP	48		询价
标准国际(香港)有限公司	C4517A		25+		50	全新原装!优势库存热卖中!	询价
深圳市向鸿伟业电子有限公司	C451G	荣盛电子	2403+	SOP	11809	原装现货!欢迎随时咨询!	询价
深圳市中联芯电子有限公司	C451PB1	PRX	25+	MODULE	63	主打螺丝模块系列	询价
深圳市百诺芯科技有限公司	C451G	NEC	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市昂芯微科技有限公司	C451G	NEC	23+	SOP14	8215	原厂原装	询价
中天科工半导体（深圳）有限公司	C451G	NEC	20+	SOP14P	36800	原装优势主营型号-可开原型号增税票	询价
深圳市英卓尔科技有限公司	C451MA	NEC	20+	SOP-14	2960	诚信交易大量库存现货	询价
深圳市卓越微芯电子有限公司	C451G	NEC	25+	SOP14	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价

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找IC，尽在114IC

C451价格

C451产品属性

C451供应商更多...

C451芯片相关品牌

C451规格书下载地址

C451参数引脚图相关

C451数据表相关新闻

C3M0160120D封装TO-247-3场效应管N沟道MOSFET管mos管原装现货

C44UVGT5900T81K电容器

C4532X7R1H475KT000N原装贴片电容TDK18138231376

C3D10060A

C4532X7R3D222KT000N深圳市光华微科技有限公司18138231376

C4532X5R1A476M280KA电容中文资料规格书深圳市凌丰发微电子有限公司

DdatasheetPDF页码索引