位置:首页 > IC中文资料第1682页 > C45
C45晶体管资料
C450别名:C450三极管、C450晶体管、C450晶体三极管
C450生产厂家:美国空间功率电子学公司
C450制作材料:Si-NPN
C450性质:通用型 (Uni)
C450封装形式:直插封装
C450极限工作电压:40V
C450最大电流允许值:
C450最大工作频率:60MHZ
C450引脚数:3
C450最大耗散功率:0.2W
C450放大倍数:
C450图片代号:C-62
C450vtest:40
C450htest:60000000
- C450atest:0
C450wtest:0.2
C450代换 C450用什么型号代替:
C45价格
参考价格:¥281.3029
型号:C450 品牌:Coilcraft 备注:这里有C45多少钱,2025年最近7天走势,今日出价,今日竞价,C45批发/采购报价,C45行情走势销售排行榜,C45报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
C45 | Compact size 文件:3.60547 Mbytes Page:9 Pages | Surge Surge Components | ||
C45 | Broad Voltage Range?봘p to 800 V 文件:262.3 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
Phase Control SCR 1640 Amperes Average 1600 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,HermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
ALKALINE ALKALINE •Mercuryfree •Extendedoperationlife •Suitableforuseindigitalmetres,calculators,torchesandsecurityequipment •Highercapacitythanzincchloridebatteries •Suitableforapplicationswherehighintermittentcurrentsarerequired. NICKELMETALHYDRIDENIMH •Rechargea | DUBILIER dubilier | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options Features SurfaceMountPackageOptional ReflowProcessCompatibleOptional AT-CutandSC-CutCrystalOptions LowProfileCompactPackage TypicalApplications BaseStations TestEquipment Synthesizers DigitalSwitching | Vectron Vectron International, Inc | |||
OCXO Surface Mount Package Reflow Process Compatible AT-Cut and SC-Cut Crystal Options Compact Package Features SurfaceMountPackage ReflowProcessCompatible AT-CutandSC-CutCrystalOptions CompactPackage | Vectron Vectron International, Inc | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1640 Amperes Average 1600 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,HermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1640 Amperes Average 1600 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,HermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1640 Amperes Average 1600 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,HermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1640 Amperes Average 1600 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,HermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1640 Amperes Average 1600 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,HermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1640 Amperes Average 1600 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,HermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) Application:AudioandGeneralPurpose Complementtotype2SA1726 | SankenSanken electric 三垦三垦电气株式会社 | |||
Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Fpackage ·Highvoltageswitchingtransistor APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak,hermeticPow-R-Discdevicesemployingthefieldprovenamplifyinggate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability □H | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors | |||
Phase Control SCR 1400-1500 Amperes Avg 500-1800 Volts Description: PowerexSiliconControlledRectifiers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dtCapability □Highdv/dtCapability | POWEREX Powerex Power Semiconductors |
替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Dual Operational Amplifiers | PanasonicPanasonic Semiconductor 松下松下电器 | |||
Dual Operational Amplifiers | PanasonicPanasonic Semiconductor 松下松下电器 | |||
Dual Low Noise, High Slew Rate Operational Amplifiers | PanasonicPanasonic Semiconductor 松下松下电器 | |||
Dual operational amplifier | ROHMRohm 罗姆罗姆半导体集团 | |||
Dual Operational Amplifier | ROHMRohm 罗姆罗姆半导体集团 | |||
HIGH-GAIN SINGLE AND DUAL OPERATIONAL AMPLIFIERS FOR MILITARY INDUSTRIAL AND COMMERCIAL APPLICATIONS | HARRISHarris Corporation | |||
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | |||
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | |||
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | |||
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | |||
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | |||
Dual Operational Amplifier | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Dual Operational Amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Dual Operational Amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Dual Operational Amplifier | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High-Performance Dual Operational Amplifiers | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Dual Operational Amplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | |||
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual Operational Amplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
HIGH-GAIN SINGLE AND DUAL OPERATIONAL AMPLIFIERS FOR MILITARY INDUSTRIAL AND COMMERCIAL APPLICATIONS | HARRISHarris Corporation | |||
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual Operational Amplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | |||
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | |||
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual Operational Amplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
DUAL SINGLE POWER SUPPLY OPERATIONAL AMPLIFIERS | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | |||
DUAL OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
General purpose operational amplifier | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | |||
HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
DUAL OPERATIONAL AMPLIFIER | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
DUAL OPERATIONAL AMPLIFIER | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
DUAL OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
General purpose operational amplifier | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
DUAL OPERATIONAL AMPLIFIER | NJRCNew Japan Radio 新日本无线株式会社 | |||
DUAL OPERATIONAL AMPLIFIER | NJRCNew Japan Radio 新日本无线株式会社 | |||
DUAL OPERATIONAL AMPLIFIER | NJRCNew Japan Radio 新日本无线株式会社 | |||
Integrated Circuit Dual Operational Amplifier | NTENTE Electronics | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | |||
Dual High-Gain Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | |||
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIERS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
INDUSTRIAL LINEAR ICS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIERS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIERS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
INDUSTRIAL LINEAR ICS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
Bipolar Analog Integrated Circuit | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
Bipolar Analog Integrated Circuit | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
INDUSTRIAL LINEAR ICS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |
C45产品属性
- 类型
描述
- 型号
C45
- 功能描述
电感器套件及配件 RF Chip Inductr Kit 0.11-22 uH Values
- RoHS
否
- 制造商
Bourns
- 产品
SMD Inductor Kits
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TDK/东电化 |
24+ |
4532 |
18392 |
TDK原厂直供,全系列可订货。美金交易,大陆交货。 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
TDK |
24+ |
SMD |
6800 |
只做自己库存,全新原装进口正品假一赔百,可开13个点增票 |
|||
HongKongCrystal |
24+ |
只做原装 |
5850 |
进口原装假一赔百,现货热卖 |
|||
TDK/东电化 |
24+ |
SMD |
20000 |
原厂原装,正品现货,假一罚十 |
|||
TDK |
1782 |
1812
|
1000 |
原装正品现货 |
|||
NEC |
2024 |
SOP14 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
TDK |
25+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
HONGKONGCRYSTAL |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
24+ |
SOT-252 |
2418 |
C45规格书下载地址
C45参数引脚图相关
- ccd图像传感器
- ccd传感器
- CCD
- cbb电容
- cbb60
- capsense
- can总线
- ca851
- ca3410
- ca158
- ca1558
- ca1458
- ca139
- ca121
- c960
- c903
- c9012
- c901
- C80
- c62f
- C6052M
- C6050G
- C6017
- C6016
- C6014
- C6013
- C6011
- C6010P
- C6010
- C6009P
- C6003
- C6001
- C596C(IC)
- C596(IC)
- C577H
- C575C2
- C555A
- C554C
- C4LS374AP
- C4558C
- C450PC2
- C450PC1
- C450PB2
- C450PB1
- C450PB
- C450PA2
- C450PA1
- C450P2
- C450P1
- C450P
- C450N2
- C450N1
- C450N
- C450M2
- C450M1
- C450M
- C450E2
- C450E1
- C4505
- C4500
- C44VH10
- C44H8
- C44H7
- C44H5
- C44H4
- C44H2
- C44H11
- C44H10
- C44H1
- C44DRY
- C44DRX
- C44DRT
- C44C8
- C44C11
- C441PS
- C441PN
- C441PM
- C441PE
- C441PD
- C441PC
- C4059P
- C393C(IC)
- C393C
- C3806P
- C3801P
- C3800P
- C358C
- C31C
- C3075P
- C3073P
- C305C(IC)
- C3050P
- C3041P
- C3040P
- C3030P
- C3020P
- C3010P
- C3004P
- C3002P
- C3001T
C45数据表相关新闻
C3M0160120D封装TO-247-3场效应管N沟道MOSFET管mos管原装现货
C3M0160120D封装TO-247-3场效应管N沟道MOSFET管mos管原装现货
2025-2-28C44UVGT5900T81K电容器
KEMET的电容器在恶劣环境下具有300,000小时的使用寿命
2024-4-8C4532X7R1H475KT000N原装贴片电容TDK18138231376
产品等级:优级品 封装:SMD 耐压值:50(V) 批号:17+ 外形:方块状 应用范围:通用 允许偏差:±10(%
2019-10-17C3D10060A
C3D10060A,全新原装当天发货或门市自取0755-82732291.
2019-9-6C4532X7R3D222KT000N深圳市光华微科技有限公司18138231376
TDK车规全系列欢迎来电全系列
2019-6-22C4532X5R1A476M280KA电容中文资料规格书深圳市凌丰发微电子有限公司
C4532X5R1A476M280KATDK电容
2019-3-7
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101