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C40-28晶体管资料

  • C40-28别名:C40-28三极管、C40-28晶体管、C40-28晶体三极管

  • C40-28生产厂家:美国空间功率电子学公司

  • C40-28制作材料:Si-NPN

  • C40-28性质:射频/高频放大 (HF)_功率放大 (L)

  • C40-28封装形式:贴片封装

  • C40-28极限工作电压:33V

  • C40-28最大电流允许值:4A

  • C40-28最大工作频率:400MHZ

  • C40-28引脚数:4

  • C40-28最大耗散功率:80W

  • C40-28放大倍数

  • C40-28图片代号:G-105

  • C40-28vtest:33

  • C40-28htest:400000000

  • C40-28atest:4

  • C40-28wtest:80

  • C40-28代换 C40-28用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE STAND-OFF VOLTAGE 12 TO 150 Volts 40000 Watt Peak Pulse Power

HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE STAND-OFF VOLTAGE 12 TO 150 Volts 40000 Watt Peak Pulse Power FEATURES • Glass passivated junction • Bidirectional • 40000W Peak Pulse Power capability on 10x1000 μs waveform • Excellent clamping capability • Repetition r

MDE

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability. FEATURES: • 175 MHz 28 V Class C • Efficiency 60 min • POUT = 4

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. FEATURES: • Common Emitter • PG = 7.0 dB at 40 W/175 MHz • Omnigold™ Metalization System • Emitter Ballast resistors

ASI

NPN SILICON RF POWER TRANSISTOR

文件:23.59 Kbytes Page:2 Pages

ASI

4.2 AMP 600 VOLTS 1.2ohm N-Channel Power MOSFET

文件:217.36 Kbytes Page:2 Pages

SSDI

更新时间:2026-5-16 16:20:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VHB50W-Q24-S12
25+
34
34
CUI INC
25+
N/A
20000
原装
CUIINC
21+
NA
1820
只做原装,一定有货,不止网上数量,量多可订货!
CUI
25+
电源模块
84
就找我吧!--邀您体验愉快问购元件!
CUIINC
24+
NA
41
原装现货,专业配单专家
CUIINC
23+
SIPDIP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
67000
一级代理-主营优势-实惠价格-不悔选择

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