HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE STAND-OFF VOLTAGE 12 TO 150 Volts 40000 Watt Peak Pulse Power

HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE STAND-OFF VOLTAGE 12 TO 150 Volts 40000 Watt Peak Pulse Power FEATURES • Glass passivated junction • Bidirectional • 40000W Peak Pulse Power capability on 10x1000 μs waveform • Excellent clamping capability • Repetition r

HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE STAND-OFF VOLTAGE 12 to 150 Volts

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability. FEATURES: • 175 MHz 28 V Class C • Efficiency 60 min • POUT = 4

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. FEATURES: • Common Emitter • PG = 7.0 dB at 40 W/175 MHz • Omnigold™ Metalization System • Emitter Ballast resistors

NPN SILICON RF POWER TRANSISTOR

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4.2 AMP 600 VOLTS 1.2ohm N-Channel Power MOSFET

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